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-40 V P-channel power MOSFETs for automotive use, with -4.5 V drive voltage enabling operation even during a battery voltage drop: XPH3R114MC, XPH4R714MC, XPN9R614MC

Product News 2019-06

The package photograph of -40 V P-channel power MOSFETs for automotive use, with -4.5 V drive voltage enabling operation even during a battery voltage drop: XPH3R114MC, XPH4R714MC, XPN9R614MC.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “XPH3R114MC”, “XPH4R714MC” and “XPN9R614MC” of -40 V P-channel power MOSFETs for automotive use.
By adopting the latest U-MOSVI process[1] for P-channel MOSFETs, these new products feature low On-resistance. Especially the XPH3R114MC, which has industry leading[2] lowest On-resistance[3], which helps energy saving due to reduction of conduction losses. With gate-to-source voltage of -4.5 V, they also enable operation even in the event of batter voltage drop. In addition, they offer a narrow gate threshold voltage range of 1.1 V, which reduces drain current variance and facilitates control when used in parallel.
New products are suitable for use in applications such as load switches and motor drives for automotive equipment.

Notes:
[1] As of March 2019
[2] Comparison with the product of the same maximum rating, according to a survey by Toshiba (as of March 2019).
[3] XPH3R114MC: RDS(ON)=3.1 mΩ (max) @VGS=-10 V

Features

  • Low On-resistance
      RDS(ON)=3.1 mΩ (max) @VGS=-10 V (XPH3R114MC)
      RDS(ON)=4.7 mΩ (max) @VGS=-10 V (XPH4R714MC)
      RDS(ON)=9.6 mΩ (max) @VGS=-10 V (XPN9R614MC)
  • Low gate drive voltage (VGS=-4.5 V)
  • Narrow gate threshold voltage range: Vth=-1.0 to -2.1 V (narrow: 1.1 V range)

Applications

  • Automotive equipment
      Load switches
      Motor drives

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part number Absolute
maximum ratings
Drain-source
On-resistance
RDS(ON)
max
(mΩ)
Gate
threshold
voltage
Vth
(V)
Channel-
to-case
thermal
impedance
Zth(ch-c)
max
@Tc=25 °C
(°C/W)
Package
Drain-
source
voltage
VDSS
(V)
Drain
current
(DC)
ID
(A)
@VGS=
-4.5 V
@VGS=
-10 V
min max
XPH3R114MC -40 -100 4.7 3.1 -1.0 -2.1 0.88 SOP Advance(WF)
XPH4R714MC -60 6.9 4.7 1.13
XPN9R614MC -40 13.4 9.6 1.5 TSON Advance(WF)

Internal Circuit

The illustration of internal circuit of -40 V P-channel power MOSFETs for automotive use, with -4.5 V drive voltage enabling operation even during a battery voltage drop: XPH3R114MC, XPH4R714MC, XPN9R614MC.

Application Circuit Example

The illustration of application circuit example of -40 V P-channel power MOSFETs for automotive use, with -4.5 V drive voltage enabling operation even during a battery voltage drop: XPH3R114MC, XPH4R714MC, XPN9R614MC.


Brushless motor drive circuit

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.