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用于车载应用,采用-4.5V驱动电压,即使在电池电压跌落期间也能工作的-40V P沟道功率MOSFET:XPH3R114MC,XPH4R714MC,XPN9R614MC

产品新闻2019年6月

用于车载应用,采用-4.5V驱动电压,即使在电池电压下降期间也能工作的-40V P沟道功率MOSFET的封装照片:XPH3R114MC,XPH4R714MC,XPN9R614MC。

东芝电子元件及存储装置株式会社(“东芝”)推出了用于车载应用的-40V P沟道功率MOSFET“XPH3R114MC”,“XPH4R714MC”和“XPN9R614MC”。
这些新产品采用最新的P沟道MOSFET U-MOSVI工艺[1],具有低的导通电阻。特别是XPH3R114MC,它具有行业领先[2]的最低导通电阻[3],因其减少了导通损耗,有助于节能。当栅极源极电压为-4.5V时,即使在电池电压跌落的情况下,它们也能进行工作。此外,它们还提供窄的栅极阈值电压范围,为1.1V,这减少了漏极电流变化,有利于并联使用时的控制。
新产品适用于车载设备的负载开关和电机驱动等应用。

注:
[1] 截止于2019年3月
[2] 与具有相同最大额定值的产品相比,根据截止于2019年3月的东芝调查。
[3] XPH3R114MC:RDS(ON)=3.1mΩ(最大值)@VGS=-10V

特点

  • 低导通电阻
      RDS(ON)=3.1mΩ(最大值)@VGS=-10V(XPH3R114MC)
      RDS(ON)=4.7mΩ(最大值)@VGS=-10V(XPH4R714MC)
      RDS(ON)=9.6mΩ(最大值)@VGS=-10V(XPN9R614MC)
  • 低的栅极驱动电压(VGS=-4.5V)
  • 窄的栅极阈值电压范围:Vth=-1.0至-2.1V(窄:1.1V范围)

应用

  • 汽车设备
      负载开关
      电机驱动

产品规格

(除非另有规定,@Ta=25°C)

器件型号 最大绝对额定值 漏极-源极导通电阻
RDS(ON)
最大值
(mΩ)
栅极阈值电压
Vth
(V)
沟道到外壳的热阻抗
Zth(ch-c)
最大值
@Tc=25°C
(°C/W)
封装
漏极-源极电压
VDSS
(V)
漏极电流
(DC)
ID
(A)
@VGS
-4.5V
@VGS
-10V
最小值 最大值
XPH3R114MC -40 -100 4.7 3.1 -1.0 -2.1 0.88 SOP Advance(WF)
XPH4R714MC -60 6.9 4.7 1.13
XPN9R614MC -40 13.4 9.6 1.5 TSON Advance(WF)

内部电路

用于车载应用,采用-4.5V驱动电压,即使在电池电压跌落期间也能工作的-40V P沟道功率MOSFET的内部电路图示:XPH3R114MC,XPH4R714MC,XPN9R614MC。

应用电路实例

用于车载应用,采用-4.5V驱动电压,即使在电池电压跌落期间也能工作的-40V P沟道功率MOSFET的应用电路实例说明:XPH3R114MC,XPH4R714MC,XPN9R614MC。



无刷电机驱动电路

本文所示应用电路仅供参考。
需要进行全面评估,特别是在量产设计阶段。
提供这些应用电路实例并不授予任何工业产权许可。

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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