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用于工业设备、具有业内最低导通电阻的100V N通道功率MOSFET产品:TPH3R70APL,TPN1200APL

产品新闻2017年12月

The package photograph of 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL.

“TPH3R70APL”和“TPN1200APL”是全新的低电压N通道功率MOSFET产品(U-MOSIX-H系列);这些100V产品适用于工业设备的电源。
TPH3R70APL和TPN1200APL采用公司最新的低电压U-MOSIX-H沟槽工艺,优化了器件结构,能提供业内最低的导通电阻[1]。而且,它们与当前采用U-MOSVIII-H工艺的器件相比,具备开关应用对于MOSFET所要求的关键品质因数,即较低的导通电阻×输出电荷和导通电阻×门开关电荷[2]
东芝电子元件及存储装置株式会社将继续顺应市场趋势扩大其MOSFET产品组合,以帮助改进电源效率。

注:
[1] 基于东芝电子元件及存储装置株式会社对于同等级MOSFET的调查研究,截止于2017年11月。
[2] 就TPH3R70APL相对于TPH4R10ANL(U-MOSVIII-H)而言,其导通电阻×输出电荷降低10%,导通电阻×门开关电荷降低10%。

特点

  • 业内最低的导通电阻[1]
       RDS(ON)=3.7mΩ(最大值)@VGS=10V(TPH3R70APL)
       RDS(ON)=11.5mΩ(最大值)@VGS=10V(TPN1200APL)
  • 输出电荷低,门开关电荷低
  • 允许4.5V逻辑电平驱动

应用

  • 工业设备用电源
  • 电机控制设备

产品规格

(除非另有规定,@Ta=25°C)

器件型号 绝对最大额定值 漏极-源极导通电阻
RDS(ON)最大值
(mΩ)
总栅极电荷
Qg
典型值
(nC)
门开关电荷
QSW
典型值
(nC)
输出电荷
Qoss
典型值
(nC)
输入电容
Ciss
典型值
(pF)
封装
漏极-
源极
电压
VDSS
(V)
漏极
电流
(DC)
ID
@TC=25°C
(A)
@VGS
=10V
@VGS
=4.5V
TPH3R70APL 100 90 3.7 6.2 67 21 74 4850 SOP Advance
TPN1200APL 40 11.5 20 24 7.5 24 1425 TSON Advance

内部电路

The illustration of internal circuit of 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL.

应用电路实例

The illustration of application circuit example of 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL.

The illustration of application circuit example of 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL.

本文所示应用电路仅供参考。需要进行全面评估,特别是在量产设计阶段。东芝电子元件及存储装置株式会社提供这些应用电路实例并不表示提供了任何的工业产权许可。

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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