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有助于降低家用电器功耗和辐射的分立IGBT:GT30J110SRA

产品新闻2020年11月

The package photograph of a discrete IGBT that helps reduce the power consumption and radiated emissions of home appliances : GT30J110SRA.

东芝电子元件及存储装置株式会社(以下简称“东芝”)新推出了一款1100V的分立IGBT——GT30J110SRA,该产品适用于IH电饭煲和使用AC 100V输入电压谐振电路的微波炉等家用电器。

全新的GT30J110SRA产品的特性得到了较大改善。与现有产品【1】相比,其损耗、短路电流抑制、电磁辐射都更低,安全工作区域也更为宽泛。

通过降低关断开关和二极管传导损耗,能实现更低的损耗。通过降低辐射噪声,可以使用比过去更为小巧的栅极驱动电阻。典型开通时间【2】为0.2μs,比现有产品【1】减少约20%,典型关断时间【2】为0.33μs,比现有产品减少约29%。二极管的典型正向电压【3】为1.40V,降低了约33%,极大的降低设备功耗。

通过降低饱和电流来实现短路电流抑制,这样可以降低设备启动期间谐振电容器的短路电流。新品的典型饱和电流峰值为200A,比现有产品【1】降低了约40%,在60A或更低的情况下,其集电极-发射极饱和电压等于现有产品【1】

与现有产品【1】相比,它的安全使用区域高压侧扩大了,使产品不易损坏。

通过优化芯片结构,实现了较低的电磁辐射【4】。该芯片在电磁辐射水平最强的30MHz左右时,辐射发射量仅为35.8dBμV/m,比现有产品降低约10dBμV/m【5】

[1] 现有产品GT60PR21
[2] @VCE=600V,VIC=60A,VGE=+15V,Ta=25°C
[3] @IF=30A,VGE=0V,Ta=25°C
[4] 东芝的测定值
[5] 现有产品GT40QR21

特性

  • 第6.5代
  • RC结构内置二极管
  • 低二极管正向电压:VF=1.40V(典型值)@IF=30A,Ta=25°C

应用

家用电器的电压谐振

  • IH电饭煲
  • IH电磁炉
  • 微波炉,等等

产品规格

(除非另有规定,@Ta=25℃)

器件型号 封装 绝对最大额定值 集电极-
发射极
饱和电压
VCE(sat)典型值(V)
二极管
正向电压
VF典型值(V)
开关时间
(下降时间)
tf典型值(µs)
结壳热阻
Rth(j-c)最大值(°C/W)
集电极
-发射极
电压
VCES(V)
集电极电流(DC)IC(A) 结温
Tj(°C)
@Tc=25°C
@Tc=100°C
@IC=30A,
VGE=15V
@IF=30A,
VGE=0V
GT30J110SRA TO-3P(N) 1100 60 30 175 1.60 1.40 0.17 0.48

内部电路

The illustration of internal circuit of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.

应用电路示例

The illustration of application circuit example of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.

本文所示应用电路仅供参考。
需要进行彻底的评估,特别是在量产设计阶段。
提供这些应用电路示例并不表示授予任何工业产权许可。

特性曲线

The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
  • 新品二极管正向电压【3】在25°C和30A时的典型值为1.40V,比现有产品【1】降低约33%,因此有助于降低设备的功耗。
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
  • 与现有产品相比,新品已经改变了芯片设计,以减少启动期间因电压谐振产生的电容器短路电流【1】。当TC=25°C且VGE =15V时,集电极电流被抑制到150A至200A。在60A或更低的情况下,其集电极-发射极饱和电压等于现有产品【1】的电压。
  • 与现有产品相比,新产品性能更平衡,且具有较大的栅极电阻范围【1】
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
  • 与现有同类产品【5】相比,新产品在30MHz左右的电磁辐射强度最高,辐射水平降低了约10dBμV/m。

本文档中的产品价格和规格、服务内容和联系方式等信息,在公告之日仍为最新信息,如有变更,恕不另行通知。

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