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推出用于IGBT和MOSFET栅极驱动,薄型封装,可在高温下工作的光耦:TLP5771H,TLP5772H,TLP5774H

产品新闻2021年5月

IGBT 和 MOSFET 栅极驱动用光耦的封装:TLP5771H、TLP5772H、TLP5774H

东芝电子元件及存储装置株式会社(“东芝”)推出了采用SO6L封装的光耦产品TLP5771H、TLP5772H和TLP5774H,可通过隔离的控制电路来驱动中小型MOSFET或IGBT栅极。

与现有产品相比[1],新产品的最高工作温度从110℃提高至125℃。新产品的主要特性是工作温度范围为-40~125℃,从而使设计和保持温度余量变得更加容易。

该封装轻薄小巧,最大高度仅为2.3mm,有助于提高系统板上零件布局的灵活性。此外,该封装可安装在东芝使用SDIP6封装[3]的以往产品[2]焊盘上。因此,可以将产品安装在电路板的背面或高度受限的位置,从而取代以往产品。

注:
[1]现有产品:TLP5771、TLP5772和TLP5774
[2]以往产品:使用SDIP6封装的TLP700H和TLP701H
[3]封装高度:4.15mm(最大值)

特性

  • 大峰值输出电流额定值(@Ta=-40至125℃)
      IOPH/IOPL=-1.0/+1.0A(TLP5771H)
      IOPH/IOPL=-2.5/+2.5A(TLP5772H)
      IOPH/IOPL=-4.0/+4.0A(TLP5774H)
  • 高工作温度额定值:Topr最大值=125°C
  • 轨对轨输出

应用

IGBT/MOSFET隔离栅极驱动器

  • 工业设备(工业逆变器、光伏逆变器的功率调节器等)
  • 家电设备(空调逆变器等)

产品规格

(除非另有规定,@Ta=-40–125℃)

器件型号 TLP5771H TLP5772H TLP5774H
封装 SO6L
轨对轨输出 内置
绝对最大
额定值
峰值输出电流IOPH/IOPL(A) -1.0/+1.0 -2.5/+2.5 -4.0/+4.0
电气特性 电源电压VCC最小值/最大值(V) 10/30
电源电流ICCH,ICCL最大值(mA) 3
输入电流阈值(L/H)IFLH
最大值(mA)
2
开关特性 传输延迟时间tpLH,tpHL
最大值(ns)
150
传输延迟时间tpsk
最小值/最大值(ns)
-80、+80
共模瞬态抑制
CMH,CML
最小值(kV/μs)
@Ta=25°C ±35

引脚分配

The illustration of pin assignment of launch of the photocouplers for the gate drive of IGBT and MOSFET which is the thin package with high temperature operation : TLP5771H, TLP5772H, TLP5774H.

应用电路示例

The illustration of application circuit example of launch of the photocouplers for the gate drive of IGBT and MOSFET which is the thin package with high temperature operation : TLP5771H, TLP5772H, TLP5774H.

注:
本文所示应用电路仅供参考。需要进行全面评估,特别是在量产设计阶段。
提供这些应用电路示例并不授予任何工业产权许可。

* 本文档中的产品价格和规格、服务内容和联系方式等信息,在公告之日仍为最新信息,如有变更,恕不另行通知。

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