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用于车载大电流应用的MOSFET栅极驱动器开关IPD:TPD7106F

2020年5月产品新闻

A MOSFET gate driver switch IPD for automotive high current applications : TPD7106F

东芝电子元件及存储装置株式会社(简称“东芝”)推出栅极驱动器开关IPD[1]“TPD7106F”,用以控制适用于接线盒和车身控制模块等汽车电子控制单元(ECU)的电流导通和关断操作。

若配合东芝车用低导通电阻N沟道MOSFET[2]使用,这款新产品可作为高压侧开关支持大电流应用。与机械继电器不同,这款开关不会发生接触磨损,因此无需进行器件维护。
为防止MOSFET短路,TPD7106F利用输入/输出端子快速关闭MOSFET,并由微控制器独立操控。当出现异常操作时,MOSFET会立刻关闭。
该产品的额定工作温度高达150°C,支持在高温环境下工作。除了抑制电池反接时的泄漏电流,它还支持MOSFET的共源连接。同时,它的维持电流非常低,最高不超过5μA。
TPD7106F采用小号SSOP16[3]封装,这有助于汽车ECU实现小型化和低功耗化。

注:
[1] IPD(智能功率器件)
[2] 使用器件举例:TKR74F04PBx4(40V/250A)
[3] SSOP16:5.0×6.4mm(典型尺寸)

特点

  • AEC-Q100认证
  • 根据负载电流,可配合低导通电阻N沟道MOSFET[2]使用
  • 内置输入/输出端子,以便在出现异常操作时迅速关闭MOSFET

应用

汽车设备

  • ECU(车身控制模块和接线盒等)
  • 配电模块
  • 半导体继电器

产品规格

(@Ta=25°C,除非另有规定)

器件型号 TPD7106F
封装 SSOP16
绝对
最大
额定值
供电电压VDD(1)(V) -18至27
供电电压VDD(2)(V) @t≤500ms 40
输入电压VSTBY(V) -0.3至40.0
输入电压VIN(1),VIN(2)(V) -0.3至6.0
CPV电压VCPV(V) 40
TEST引脚电压VTEST(V) 40
输出拉电流IOUT1(1)(mA) -10
输出灌电流IOUT1(2)(mA) 10
输出灌电流IOUT2(mA) 400
DIAG输出电压VDIAG -0.3至40.0
DIAG输出电流IDIAG(mA) 5
功率损耗PD(W) 1.16
工作温度Topr(°C) -40至150
工作电压范围 电源工作电压VDD(V) @Tj=-40至150°C 4.5至27.0
电气特性 速关驱动工作时间tO2ON典型值(μs) @Tj=25°C 100
供电电流IDD(1)最大值(μA) @standby,Tj=25°C 5.0

方框图

The illustration of block diagrampin of A MOSFET gate driver switch IPD for automotive high current applications  : TPD7106F.

备注:为了方便说明,此方框图可能忽略或简化了部分功能块、电路或常量。

应用电路实例

The illustration of application circuit example of A MOSFET gate driver switch IPD for automotive high current applications  : TPD7106F.

备注:本文所示应用电路仅供参考。需要进行全面评估,特别是在量产设计阶段。提供这些应用电路实例并不授予任何工业产权许可。

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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