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最新碳化硅技术,推进脱碳社会建设
近年来,为应对气候变化所带来的影响,世界上许多国家都宣布了其碳减排目标。功率半导体器件可传输和控制电力,对于降低各种汽车和工业电气应用的能源消耗至关重要。碳化硅功率器件与现在占据主导地位的硅功率器件相比,具有更好的物理特性,有助于电动汽车的轻量化、单次充电的续航里程的增加,以及数据中心电源效率的提高等。因此,碳化硅半导体功率器件在功率器件中的应用范围正在逐渐扩大。东芝第三代SiC MOSFET拥有更低的功耗,支持如开关电源(数据中心服务器、通信设备等)、不间断电源(UPS)、光伏逆变器、电动汽车充电站等各种高功率密度应用。
本次研讨会上我们将重点介绍东芝第三代SiC MOSFET/SBD的技术特性及其应用场景。
线上研讨会:2024年9月25日(星期三)10:00~12:00
参 加 费 用:免费
主 办:东芝电子元件(上海)有限公司