SSM6L820R

Small-signal MOSFET 2 in 1

產品概要

Application Scope Power Management Switches
Polarity N-ch + P-ch
Generation U-MOSⅦ-H / U-MOSⅥ
Internal Connection Independent
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

包裝資訊

Toshiba Package Name TSOP6F
Package Image TSOP6F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions 檢視
Land pattern dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 單位
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS -8/+12 V
Drain current (Q1) ID 4 A
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS -12/+6 V
Drain current (Q2) ID -4 A
Power Dissipation PD 1.4 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 82
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 53
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 39.1
Input capacitance (Q1) (Typ.) Ciss - 310 pF
Total gate charge (Q1) (Typ.) Qg VGS=4.5V 3.2 nC
Gate threshold voltage (Q2) (Max) Vth - -1.2 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 45
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 56
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 76
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 157
Input capacitance (Q2) (Typ.) Ciss - 480 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4.5V 6.7 nC
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文檔

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May,2020

Feb,2024

Dec,2023

May,2024

May,2024

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
Note
SSM6L820R,LF 3000 Yes - General Use
SSM6L820R,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)
SSM6L820R,LXHF 3000 - Yes Yes Automotive Use

(Note):For more information, please contact our sales or use the inquiry form on our website.


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