TPC8408

停產產品

Power MOSFET (N-ch + P-ch complementary)

數據表

TPC8408 數據表/日文[Jan,2014]PDF: 525KB

數據表

TPC8408 數據表/英文[Jan,2014]PDF: 403KB

Simulation Model

PSpice Model[Dec,2016]ZIP: 5KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

Application Note

The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

Application Note

The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

Application Note

The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

數據表

TPC8408 數據表/日文[Jan,2014]PDF: 525KB

數據表

TPC8408 數據表/英文[Jan,2014]PDF: 403KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

Application Note

The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

Application Note

The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

Application Note

The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Dec,2016]ZIP: 5KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

產品概要

Application Scope Mobile Equipments / Motor Drivers
Polarity N-ch + P-ch
Generation U-MOSⅥ-H / U-MOSⅥ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOP-8
Package Image SOP-8
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 4.9×6.0×1.52
Package Dimensions 檢視
Land pattern dimensions 檢視
CAD data
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

 (Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

絕對最大額定值

項目 符號 值 單位
Drain-Source voltage (Q1) VDSS 40 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 6.1 A
Drain-Source voltage (Q2) VDSS -40 V
Gate-Source voltage (Q2) VGSS +/-20 V
Drain current (Q2) ID -5.3 A
Power Dissipation PD 1.5 W

電器特性

項目 符號 條件 值 單位
Gate threshold voltage (Q1) (Max) Vth - 2.3 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 36 mΩ
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 32 mΩ
Input capacitance (Q1) (Typ.) Ciss - 850 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 14 nC
Gate threshold voltage (Q2) (Max) Vth - -2.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 43 mΩ
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 53 mΩ
Input capacitance (Q2) (Typ.) Ciss - 1105 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 24 nC

文檔

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Dec,2016

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