Automotive On-board Charger

Automotive On-board Charger

Such as reduction of power consumption and miniaturization of circuit boards are important in designing on-board charger. Toshiba provides information on a wide range of semiconductor products suitable for DC-DC converter units, power supply units, etc., along with circuit configuration examples.

總方塊圖

點選總方塊圖中要查看詳細資訊的區域。顯示我們建議的子方塊圖的連結。

 Low Voltage Battery Low Voltage Battery High Voltage Battery High Voltage Battery Battery Reverse Protection/ Load Switch Battery Reverse Protection/Load Switch Control Circuit Control Circuit Isolated Feedback Isolated Feedback TVS TVS HV Battery/LV Battery DC-DC Converter HV Battery/LV BatteryDC-DC Converter Gate Driver Gate Driver Main DC-DC Converter MainDC-DC Converter PFC PFC CAN Line CANLine Control Circuit Control Circuit Isolated Feedback Isolated Feedback TVS TVS Gate Driver Gate Driver Gate Driver Gate Driver L1 L1 N N Relay Controller Relay Controller CAN Line CANLine Gate Driver Gate Driver Gate Driver Gate Driver 12 V DC-DC converter (Isolated type) Power supply ON/OFF control and reverse connection protection circuit Mechanical relay control circuit Control circuit
12 V DC-DC converter (Isolated type)

Example of 12 V isolated step down DC-DC converter

Power supply ON/OFF control and reverse connection protection circuit

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines

Control circuit

Example of control circuit for on-board charger

Mechanical relay control circuit

Example of mechanical relay control circuit for on-board charger

點選總方塊圖中要查看詳細資訊的區域。顯示我們建議的子方塊圖的連結。

 Low Voltage Battery Low Voltage Battery High Voltage Battery High Voltage Battery Battery Reverse Protection/ Load Switch Battery Reverse Protection/Load Switch Control Circuit Control Circuit Isolated Feedback IsolatedFeedback TVS TVS HV Battery/LV Battery DC-DC Converter HV Battery/LV BatteryDC-DC Converter Gate Driver Gate Driver Main DC-DC Converter MainDC-DC Converter PFC PFC CAN Line CANLine Control Circuit Control Circuit Isolated Feedback Isolated Feedback TVS TVS Gate Driver Gate Driver Gate Driver Gate Driver L1 L1 N N Relay Controller Relay Controller CAN Line CANLine Gate Driver Gate Driver Gate Driver Gate Driver L2 L2 L3 L3 12 V DC-DC converter (Isolated type) Power supply ON/OFF control and reverse connection protection circuit Mechanical relay control circuit Control circuit
12 V DC-DC converter (Isolated type)

Example of 12 V isolated step down DC-DC converter

Power supply ON/OFF control and reverse connection protection circuit

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines

Control circuit

Example of control circuit for on-board charger

Mechanical relay control circuit

Example of mechanical relay control circuit for on-board charger

子方塊圖

12 V DC-DC converter (Isolated type)
12 V DC-DC converter (Isolated type)

Example of 12 V isolated step down DC-DC converter

Example of 12 V isolated step down DC-DC converter
U-MOS Series 40 V / 80 V / 100 V N-ch MOSFET
器件型號
Toshiba Package Name L-TOGL L-TOGL L-TOGL L-TOGL
VDSS (Max) [V] 40 40 80 100
ID (Max) [A] 200 400 350 300
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0010 0.00030 0.00083 0.00103
Polarity N-ch N-ch N-ch N-ch
Transistor output photocoupler
器件型號
Toshiba Package Name SO4 4pin SO6 SO4 4pin SO6 4pin SO6
BVS (Min) [Vrms] @ t = 60 [s] 3750 3750 3750 3750 3750
VCEO (Max) [V] 80 80 40 40 200
Topr [°C] -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
Power supply ON/OFF control and reverse connection protection circuit
Power supply ON/OFF control and reverse connection protection circuit

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines
U-MOS Series 40 V / 80 V / 100 V N-ch MOSFET
器件型號
Toshiba Package Name L-TOGL L-TOGL L-TOGL L-TOGL
VDSS (Max) [V] 40 40 80 100
ID (Max) [A] 200 400 350 300
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0010 0.00030 0.00083 0.00103
Polarity N-ch N-ch N-ch N-ch
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
Gate driver (for switch)
器件型號
Toshiba Package name PS-8 (SON8-P) SSOP16 WSON10A
VBB (Max) [V]      
VCC (Max) [V]      
IO (Max) [A] +5mA/ Internally Limited   Internally Limited /-5m
Control circuit
Control circuit

Example of control circuit for on-board charger

Example of control circuit for on-board charger
Transistor output photocoupler
器件型號
Toshiba Package Name SO4 4pin SO6 SO4 4pin SO6 4pin SO6
BVS (Min) [Vrms] @ t = 60 [s] 3750 3750 3750 3750 3750
VCEO (Max) [V] 80 80 40 40 200
Topr [°C] -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
Mechanical relay control circuit
Mechanical relay control circuit

Example of mechanical relay control circuit for on-board charger

Example of mechanical relay control circuit for on-board charger
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
MOSFET with a built-in active clamp circuit
器件型號
Toshiba Package Name SOT-23F SOT-23F
VDSS (Max) [V] 38 38
ID (Max) [A] 2.0 2.0
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 0.41 0.176
Polarity N-ch + Active Clamp Zener N-ch + Active Clamp Zener
Low side switch / High side switch (up to 1 A)
器件型號
Toshiba Package name PS-8 (SON8-P) PS-8 (SON8-P) PS-8 (SON8-P)
VBB (Max) [V]      
VCC (Max) [V]      
IO (Max) [A]   1.0 0.8
Low side switch / High side switch (1 to 5 A)
器件型號
Toshiba Package name WSON10 WSON10
VBB (Max) [V]    
VCC (Max) [V]    
IO (Max) [A] 6.0 3.0
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
12 V DC-DC converter (Isolated type)
12 V DC-DC converter (Isolated type)

Example of 12 V isolated step down DC-DC converter

Example of 12 V isolated step down DC-DC converter
U-MOS Series 40 V / 80 V / 100 V N-ch MOSFET
器件型號
Toshiba Package Name L-TOGL L-TOGL L-TOGL L-TOGL
VDSS (Max) [V] 40 40 80 100
ID (Max) [A] 200 400 350 300
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0010 0.00030 0.00083 0.00103
Polarity N-ch N-ch N-ch N-ch
Transistor output photocoupler
器件型號
Toshiba Package Name SO4 4pin SO6 SO4 4pin SO6 4pin SO6
BVS (Min) [Vrms] @ t = 60 [s] 3750 3750 3750 3750 3750
VCEO (Max) [V] 80 80 40 40 200
Topr [°C] -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
Power supply ON/OFF control and reverse connection protection circuit
Power supply ON/OFF control and reverse connection protection circuit

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines
U-MOS Series 40 V / 80 V / 100 V N-ch MOSFET
器件型號
Toshiba Package Name L-TOGL L-TOGL L-TOGL L-TOGL
VDSS (Max) [V] 40 40 80 100
ID (Max) [A] 200 400 350 300
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0010 0.00030 0.00083 0.00103
Polarity N-ch N-ch N-ch N-ch
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
Gate driver (for switch)
器件型號
Toshiba Package name PS-8 (SON8-P) SSOP16 WSON10A
VBB (Max) [V]      
VCC (Max) [V]      
IO (Max) [A] +5mA/ Internally Limited   Internally Limited /-5m
Control circuit
Control circuit

Example of control circuit for on-board charger

Example of control circuit for on-board charger
Transistor output photocoupler
器件型號
Toshiba Package Name SO4 4pin SO6 SO4 4pin SO6 4pin SO6
BVS (Min) [Vrms] @ t = 60 [s] 3750 3750 3750 3750 3750
VCEO (Max) [V] 80 80 40 40 200
Topr [°C] -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
Mechanical relay control circuit
Mechanical relay control circuit

Example of mechanical relay control circuit for on-board charger

Example of mechanical relay control circuit for on-board charger
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
MOSFET with a built-in active clamp circuit
器件型號
Toshiba Package Name SOT-23F SOT-23F
VDSS (Max) [V] 38 38
ID (Max) [A] 2.0 2.0
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 0.41 0.176
Polarity N-ch + Active Clamp Zener N-ch + Active Clamp Zener
Low side switch / High side switch (up to 1 A)
器件型號
Toshiba Package name PS-8 (SON8-P) PS-8 (SON8-P) PS-8 (SON8-P)
VBB (Max) [V]      
VCC (Max) [V]      
IO (Max) [A]   1.0 0.8
Low side switch / High side switch (1 to 5 A)
器件型號
Toshiba Package name WSON10 WSON10
VBB (Max) [V]    
VCC (Max) [V]    
IO (Max) [A] 6.0 3.0
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP

解決方案

這些文件說明推薦的半導體產品的要點及其特徵,方便產品選擇。

參考設計

Example of TPD7106F Application Circuit.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F
This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.
Semiconductor / Design & Development / Reference Design Center / Battery Management
Short circuit detection circuit block diagram of single-output High-Side N-Channel Power MOSFET Gate Driver application and circuit of the TPD7104AF.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7104AF
This reference design provides examples of application circuit and simulation for TPD7104AF which features short load protection, reverse power connection protection and others.
Semiconductor / Design & Development / Reference Design Center / Battery Management

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