Automotive Brake Control

Automotive Brake Control

Such as reduction of power consumption and miniaturization are important in designing brake control. Toshiba provides information on a wide range of semiconductor products suitable for brake actuator units, power supply units, etc., along with circuit configuration examples.

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 Switch Switch MCU MCU Sensor Sensor Sensor Sensor · · · · · · · · Brake Actuator Brake Actuator Brake Control Brake Control TVS TVS Other ECU Other ECU CAN Line CAN Line Speed Steering Yaw rate Acceleration SpeedSteeringYaw rateAcceleration Battery (12 V) Battery(12 V) Power Supply Power Supply Reverse Battery Protection and Load Switch Reverse Battery Protectionand Load Switch Signal Conditioning Circuit Signal ConditioningCircuit Power supply ON/OFF control and reverse connection protection circuit Brake actuator for ABS/ESC
Brake actuator for ABS/ESC

Example of actuator control circuits for ABS/ESC

Power supply ON/OFF control and reverse connection protection circuit

Example of ON/OFF control and reverse connection protecting circuits using P-ch MOSFET for 12 V power lines

Example of ON/OFF control and reverse connection protecting circuits using N-ch MOSFET for 12 V power lines

子方塊圖

Brake actuator for ABS/ESC
Brake actuator for ABS/ESC

Example of actuator control circuits for ABS/ESC

Example of actuator control circuits for ABS/ESC
U-MOS Series 40 V N-ch MOSFET
器件型號
Toshiba Package Name TSON Advance(WF) DPAK_plus SOP Advance(WF) DSOP Advance(WF)L TO-220SM(W) D2PAK_plus
VDSS (Max) [V] 40 40 40 40 40 40
ID (Max) [A] 40 120 150 150 250 160
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0038 0.00135 0.00079 0.00079 0.00074 0.0015
Polarity N-ch N-ch N-ch N-ch N-ch N-ch
Power supply ON/OFF control and reverse connection protection circuit
Power supply ON/OFF control and reverse connection protection circuit (P-ch type)​

Example of ON/OFF control and reverse connection protecting circuits using P-ch MOSFET for 12 V power lines

Example of ON/OFF control and reverse connection protecting circuits using P-ch MOSFET for 12 V power lines
U-MOS series -40 V / -60 V P-ch MOSFET
器件型號
Toshiba Package Name DPAK_plus DPAK_plus SOP Advance(WF) TO-220SM(W)
VDSS (Max) [V] -40 -60 -40 -40
ID (Max) [A] -90 -60 -100 -200
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0043 0.0112 0.0031 0.0018
Polarity P-ch P-ch P-ch P-ch
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
Power supply ON/OFF control and reverse connection protection circuit (N-ch type)​

Example of ON/OFF control and reverse connection protecting circuits using N-ch MOSFET for 12 V power lines

Example of ON/OFF control and reverse connection protecting circuits using N-ch MOSFET for 12 V power lines
U-MOS Series 40 V N-ch MOSFET
器件型號
Toshiba Package Name TSON Advance(WF) DPAK_plus SOP Advance(WF) DSOP Advance(WF)L TO-220SM(W) D2PAK_plus
VDSS (Max) [V] 40 40 40 40 40 40
ID (Max) [A] 40 120 150 150 250 160
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0038 0.00135 0.00079 0.00079 0.00074 0.0015
Polarity N-ch N-ch N-ch N-ch N-ch N-ch
Gate driver (for switch)
器件型號
Toshiba Package name PS-8 (SON8-P) SSOP16 WSON10A
VBB (Max) [V]      
VCC (Max) [V]      
IO (Max) [A] +5mA/ Internally Limited   Internally Limited /-5m
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5

解決方案

這些文件說明推薦的半導體產品的要點及其特徵,方便產品選擇。

參考設計

Example of TPD7106F Application Circuit.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F
This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.
Semiconductor / Design & Development / Reference Design Center / Battery Management
Short circuit detection circuit block diagram of single-output High-Side N-Channel Power MOSFET Gate Driver application and circuit of the TPD7104AF.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7104AF
This reference design provides examples of application circuit and simulation for TPD7104AF which features short load protection, reverse power connection protection and others.
Semiconductor / Design & Development / Reference Design Center / Battery Management

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