Toshiba Announces Next-Generation Superjunction Power MOSFETs
August 20, 2018
Toshiba Electronic Devices & Storage Corporation
- New devices increase power supply efficiency even further
TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a new series of next-generation 650V power MOSFETs that are intended for use in server power supplies in data centers, solar (PV) power conditioners, uninterruptible power systems (UPS) and other industrial applications.
The first device in the DTMOS VI series is the TK040N65Z, a 650V device that supports continuous drain currents (ID) up to 57A and 228A when pulsed (IDP). The new device offers an ultra-low drain-source on-resistance RDS(ON) of 0.04Ω (0.033Ω typ.) which reduces losses in power applications. The enhancement mode device is ideal for use in modern high-speed power supplies, due to the reduced capacitance in the design.
Power supply efficiency is improved as a result of reductions in the key performance index / figure-of-merit (FoM) – RDS(ON) x Qgd. The TK040N65Z shows a 40% improvement in this important metric over the previous DTMOS IV-H device, which represents a significant gain in power supply efficiency in the region of 0.36%[1] - as measured in a 2.5kW PFC circuit.
The new device is housed in an industry-standard TO-247 package, ensuring compatibility with legacy designs as well as suitability for new projects.
Toshiba will continue to expand their product lineup to meet market trends and help improve the efficiency of power supplies and systems.
The new device enters mass production today and shipments begin immediately.
Applications
- Date centers (Server power supplies, etc.)
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Features
- Lower RDS(ON) × Qgd allows switching power supplies to improve the efficiency
Main Specifications
(@Ta=25℃)
| Part number | ||
|---|---|---|
| Package | TO-247 | |
| Absolute maximum ratings | Drain-source voltage VDSS (V) | 650 |
| Drain current (DC) ID (A) | 57 | |
| Drain-source On-resistance RDS(ON) max @VGS= 10V (Ω) | 0.040 | |
| Total gate charge Qg typ. (nC) | 105 | |
| Gate-drain charge Qgd typ. (nC) | 27 | |
| Input capacitance Ciss typ. (pF) | 6250 | |
| Previous series (DTMOS Ⅳ-H) part number | ||
| Stock Check & Purchase |
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Note:
[1] As of June 2018, values measured by Toshiba (2.5kW PFC circuit @ output power=2.5kW).
Follow the link below for more on Toshiba 400-900V MOSFET line-up.
Follow the link below to check inventory of the new product available at online distributors.
Video
Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.