降低車載設備功耗的小型表面貼裝的40V／60V N溝道功率MOSFET
Product News 2020-05
東芝電子元件及存儲裝置株式會社推出四款新型的N溝道功率MOSFET，採用小型和表面黏貼的TSON Advance（WF）封裝，低導通電阻N溝道MOSFET的新產品並適用於車用設備。40 V “XPN3R804NC” , “XPN7R104NC,” 60 V “XPN6R706NC” , “XPN12006NC.”
新產品封裝使用 TSON Advance(WF) , 有助於自動目視檢查電路板的安裝條件。此外，採用東芝“ U-MOSVIII-H”工藝的低導通電阻產品有助於設備節能。這使我們能夠替代相同尺寸包裝的東芝傳統產品。通過替代類似的5×6 mm尺寸的產品，性能的提高還可有助於ECU的小型化。
產品特點
- 通過AEC-Q101認證
- 低導通電阻 :
RDS(ON)=3.8 mΩ (max) @VGS=10 V (XPN3R804NC)
RDS(ON)=7.1 mΩ (max) @VGS=10 V (XPN7R104NC)
RDS(ON)=6.7 mΩ (max) @VGS=10 V (XPN6R706NC)
RDS(ON)=12.0 mΩ (max) @VGS=10 V (XPN12006NC) - 小型且黏貼 TSON Advance(WF) 封裝: 3.3×3.6 mm (typ.)
應用
車用設備
- Switching regulators (交換式穩壓器)
- DC-DC converters
- 馬達驅動
產品規格
(Unless otherwise specified, @Ta=25 °C)
| Part number | XPN3R804NC | XPN7R104NC | XPN6R706NC | XPN12006NC | ||
|---|---|---|---|---|---|---|
| Polarity | N-channel | |||||
| Package | Name | TSON Advance(WF) | ||||
| Size typ. (mm) | 3.3×3.6 | |||||
| Absolute maximum ratings |
Drain-source voltage VDSS (V) | 40 | 40 | 60 | 60 | |
| Drain current (DC) ID (A) | 40 | 20 | 40 | 20 | ||
| Drain current (pulsed) IDP (A) | 80 | 60 | 80 | 60 | ||
| Channel temperature Tch (°C) | 175 | |||||
| Thermal characteristics |
Channel-to-case thermal impedance Zth(ch-c) max (°C/W) |
@Tc= 25 °C |
1.5 | 2.3 | 1.5 | 2.3 |
| Electrical characteristics |
Drain-source On-resistance RDS(ON) max (mΩ) |
@VGS= 4.5 V |
7.8 | 14.2 | 13.3 | 23.7 |
| @VGS= 10 V |
3.8 | 7.1 | 6.7 | 12.0 | ||
| Series | U-MOSVIII-H | |||||
Internal Circuits
Application Circuit Examples
Note: The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.