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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Low radiated emission noise
Optimized chip design achieves low radiated emission noise. Generally speaking, lower external gate resistance (RG) reduces turn-off switching loss and heightens radiated emission noise. Switching loss can be lowered by improving the trade-off between turn-off switching loss and radiated emission noise.
Radiated emission noise is low.
The radiated emission noise of the new product is improved by about 10dBμV/m at around 30MHz, where noise-field intensity is at its highest.