Lineup Expansion of -60 V P-Channel Power MOSFETs that Contribute to Lower Power Consumption for Automotive Equipment

Product News 2023-06

The package photograph of lineup expansion of -60 V P-channel power MOSFETs that contribute to lower power consumption for automotive equipment.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of two -60 V P-channel MOSFETs using SOP Advance(WF) package for automotive and has expanded its lineup. The two models are "XPH8R316MC and XPH13016MC."

The new products XPH8R316MC and XPH13016MC are qualified with the automotive reliability standard AEC-Q101.The SOP Advance(WF) package is a surface mount type that uses a wettable flank terminal structure, which facilitates automated visual inspection of the board mounting state. In addition, it has reduced package resistance by adopting the Cu connector structure.
The maximum drain-source On-resistance of XPH8R316MC is 8.3 mΩ, which is approximately 25 % lower than that of Toshiba’s existing product TPCA8123[1], and XPH13016MC is 12.9 mΩ, which is approximately 49 % lower than that of Toshiba’s existing product TPCA8125[1]. This contributes to low power consumption of automotive equipment.

Note:
[1] SOP Advance package

Applications

  • Automotive equipment: load switches, semiconductor relays, motor drives, etc.

Features

  • AEC-Q101 qualified
  • Low On-resistance
    XPH8R316MC: RDS(ON)=8.3 mΩ (max) (VGS=-10 V)
    XPH13016MC: RDS(ON)=12.9 mΩ (max) (VGS=-10 V)
  • SOP Advance(WF) package with wettable flank terminal structure and Cu connector structure

 

Main Specifications

(Ta=25 °C unless otherwise specified)

Part number

XPH8R316MC

XPH13016MC

Polarity

P-channel

Absolute
maximum
ratings

Drain-source voltage  VDSS  (V)

-60
Drain current (DC)  ID  (A) -90 -60
Drain current (pulsed)  IDP  (A) -180 -120

Channel temperature  Tch  (°C)

175

Thermal
characteristics

Channel-to-case thermal impedance
Zth(ch-c)  (°C/W)

Tc=25 °C

max

0.88

1.13

Electrical
characteristics

Drain-source On-resistance
RDS(ON)  (mΩ)
VGS=-4.5 V max 10.2 16.6
VGS=-10 V max 8.3 12.9

Package

SOP Advance(WF)

Series

U-MOSVI

Internal Circuit

The illustration of internal circuit of lineup expansion of -60 V P-channel power MOSFETs that contribute to lower power consumption for automotive equipment.

Application Circuit Example

The illustration of application circuit example of lineup expansion of -60 V P-channel power MOSFETs that contribute to lower power consumption for automotive equipment.

Note:

The application circuits shown in this document are provided for reference purposes only.

Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

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