TPN4800CQH

Power MOSFET (N-ch single 60V<VDSS≤150V)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 150 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 18 A
Power Dissipation PD 86 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=8V 59
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 48
Input capacitance (Typ.) Ciss - 800 pF
Total gate charge (Typ.) Qg VGS=10V 11 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

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Aug,2022

Nov,2022

Feb,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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