TJ60S06M3L

Power MOSFET (P-ch single)

数据表

TJ60S06M3L 数据表/日文[Jul,2020]PDF: 380KB

数据表

TJ60S06M3L 数据表/英文[Jul,2020]PDF: 268KB

Simulation Model

PSpice Model[Jan,2016]lib: 3KB

Thermal Simulation Model

Simplified CFD Model[Aug,2023]ZIP: 8KB

Reliability Information

Reliability Data[Dec,2023]PDF: 201KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

数据表

TJ60S06M3L 数据表/日文[Jul,2020]PDF: 380KB

数据表

TJ60S06M3L 数据表/英文[Jul,2020]PDF: 268KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jan,2016]lib: 3KB

Thermal Simulation Model

Simplified CFD Model[Aug,2023]ZIP: 8KB

Reliability Information

Reliability Data[Dec,2023]PDF: 201KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

产品概要

Application Scope Automotive / Motor Drivers / DC-DC Converters / Switching Voltage Regulators
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name DPAK+
Package Image DPAK+
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)		 6.5×9.5×2.3
Package Dimensions 查看
Land pattern dimensions 查看
CAD data
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

 (Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS -60 V
Gate-Source voltage VGSS +10/-20 V
Drain current ID -60 A
Power Dissipation PD 100 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - -3.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 11.2 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 14.5 mΩ
Input capacitance (Typ.) Ciss - 7760 pF
Total gate charge (Typ.) Qg VGS=-10V 156 nC
购买及样品申请
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Jan,2016

Aug,2023

Dec,2023

可订购器件型号

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS AEC-Q100
AEC-Q101
TJ60S06M3L(T6L1,NQ 2000 Yes -
TJ60S06M3L,LXHQ 2000 - Yes Yes

应用

电动助力转向
Such as ensuring tolerance to motor lock current and reduction of power consumption are important in designing electric power steering. Toshiba provides information on a wide range of semiconductor products suitable for motor drive units, power supply units, etc., along with circuit configuration examples.
详细信息
汽车制动控制
Such as reduction of power consumption and miniaturization are important in designing brake control. Toshiba provides information on a wide range of semiconductor products suitable for brake actuator unit, motor driving unit and power supply units, etc., along with circuit configuration examples.
详细信息
Head-up Display (HUD)
Such as reduction of noise on signal line, reduction of power consumption and miniaturization are important in designing head-up display. Toshiba provides information on a wide range of semiconductor products suitable for motor drive units, power supply units, etc., along with circuit configuration examples.
详细信息
Automotive V2X
Such as reduction of power supply and signal noise and reduction of power consumption are important in designing V2X. Toshiba provides information on a wide range of semiconductor products suitable for RF block units, power supply units, etc., along with circuit configuration examples.
详细信息

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常见问题（FAQ）

Notes

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