TJ60S04M3L

Power MOSFET (P-ch single)

全部 Data sheet 应用说明 Other

数据表

TJ60S04M3L 数据表/日文[Jun,2020]PDF: 374KB

数据表

TJ60S04M3L 数据表/英文[Jun,2020]PDF: 257KB

Simulation Model

PSpice Model[Jul,2015]lib: 3KB

Thermal Simulation Model

Simplified CFD Model[Aug,2023]ZIP: 8KB

Reliability Information

Reliability Data[Dec,2023]PDF: 276KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

数据表

TJ60S04M3L 数据表/日文[Jun,2020]PDF: 374KB

数据表

TJ60S04M3L 数据表/英文[Jun,2020]PDF: 257KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jul,2015]lib: 3KB

Thermal Simulation Model

Simplified CFD Model[Aug,2023]ZIP: 8KB

Reliability Information

Reliability Data[Dec,2023]PDF: 276KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

产品概要

Application Scope	Automotive / Motor Drivers / DC-DC Converters / Switching Voltage Regulators
Polarity	P-ch
Generation	U-MOSⅥ
Internal Connection	Single
PPAP	Capable(*)
AEC-Q101	Qualified(*)
RoHS Compatible Product(s) (#)	Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name	DPAK+
Package Image
Pins	3
Mounting	Surface Mount
Width×Length×Height (mm)	6.5×9.5×2.3
Package Dimensions	查看
Land pattern dimensions	查看
CAD data (Symbol, Footprint and 3D model)	Download from UltraLibrarian^® in your desired CAD format (Note)

Please refer to the link destination to check the detailed size.

(Note) Ultra Librarian^® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

项目	符号	值	单位
Drain-Source voltage	V_DSS	-40	V
Gate-Source voltage	V_GSS	+10/-20	V
Drain current	I_D	-60	A
Power Dissipation	P_D	90	W

项目

符号

值

单位

Drain-Source voltage

V_DSS

-40

Gate-Source voltage

V_GSS

+10/-20

Drain current

I_D

-60

Power Dissipation

P_D

项目	符号	条件	值	单位
Gate threshold voltage (Max)	V_th	-	-3.0	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	6.3	mΩ
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=6V	9.4	mΩ
Input capacitance (Typ.)	C_iss	-	6510	pF
Total gate charge (Typ.)	Q_g	V_GS=-10V	125	nC

项目

符号

条件

值

单位

Gate threshold voltage (Max)

V_th

-3.0

Drain-Source on-resistance (Max)

R_DS(ON)

|V_GS|=10V

6.3

mΩ

Drain-Source on-resistance (Max)

R_DS(ON)

|V_GS|=6V

9.4

mΩ

Input capacitance (Typ.)

C_iss

6510

Total gate charge (Typ.)

Q_g

V_GS=-10V

125

Orderable part number (example)	MOQ(pcs)	Reliability Information	RoHS	AEC-Q100 AEC-Q101
TJ60S04M3L(T6L1,NQ	2000		Yes	-
TJ60S04M3L,LXHQ	2000	-	Yes	Yes

Orderable part number
(example)

MOQ(pcs)

Reliability
Information

RoHS

AEC-Q100
AEC-Q101

TJ60S04M3L(T6L1,NQ

2000

Yes

TJ60S04M3L,LXHQ

2000

Yes

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

车载类应用首页

车身电子

xEV

车载信息娱乐系统

高级驾驶辅助系统（ADAS）

底盘

工业设备类应用首页

基础设施

建筑管理系统（BEMS）／健康管理系统（HEMS)

工厂自动化

商业设备

消费类／个人设备类应用首页

IoT设备

卫生保健

可穿戴设备

移动

电脑周边

家用电器

其他内容

TJ60S04M3L

产品概要

封装

绝对最大额定值

电气特性

文档

可订购器件型号

技术咨询

相关信息

Notes