This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
请输入3个以上字符
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
请输入3个以上字符
若带电物体的静电释放到电机驱动IC中,芯片上的通用CMOS逻辑可能会发生永久性损坏。因为输入栅极的栅极氧化层只有几十到几百埃的厚度,在几百到几千伏电压的静电放电(ESD)下可能会被击穿。为了保护输入栅极不受ESD破坏,东芝电机驱动IC在逻辑输入引脚处有保护电路。但是ESD不应该直接在设备内,即使有保护电路,也有可能降低设备性能或损坏设备。