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Breakthrough of Drain Current Capability and On-Resistance Limits by Gate-Connected Superjunction MOSFET

Breakthrough of Drain Current Capability and On-Resistance Limits by Gate-Connected Superjunction MOSFET

W. Saito, "Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 36-39. doi: 10.1109/ISPSD.2018.8393596

Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393596)

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