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Technical Review

我们东芝电子元件及存储装置株式会社致力于研究和开发半导体技术,这些技术将基于我们继承的技术能力解决社会问题并创造繁荣的未来。

公司名称,产品名称和服务名称可能是其各自公司的商标。

All Designs

Toshiba
Review

需要在全球范围内解决的问题包括:能源消耗的增长和二氧化碳排放量的增加。
若要实现在节约能源的同时满足日益增长的电力需求,必须提高从发电到用电的各个阶段的能效。
*转载自Toshiba Review(第72卷,第5条,2017年11月)

2018/03March 2018

Toshiba
Review

随着近年来手机市场的不断扩大,2017财年全球手机产品年出货量将超过18亿部。由于智能手机具备传统功能手机无法实现的先进功能,所以现已成为日常生活中不可缺少的一部分。
为增强以智能手机为代表的移动设备的功能,东芝电子元件及存储装置株式会社正在推动分立半导体产品的开发,包括低压差(LDO)稳压集成电路(IC),其特点是具有卓越的电源纹波抑制特性和负载瞬态响应以及低功耗特性。
*转载自Toshiba Review(第72卷,第5条,2017年11月)

2018/04April 2018

Toshiba
Review

东芝电子元件及存储装置株式会社已开发并发布了一系列名为压装式IEGT(PPI)的注入增强栅极晶体管(IEGT),以作为高压直流系统的开关器件。这些PPI具有以下特点:(1)通过引入一种全新的沟槽结构以降低能耗18%,(2)采用一种改进的短路故障模式(SCFM),允许在器件发生故障时实现50小时连续电流驱动,和(3)通过应用一种新的封装材料实现高的抗破裂性,其抗破裂性是传统封装的1.7倍。
*转载自Toshiba Review(第72卷,第5条,2017年11月)

2018/06June 2018

Toshiba
Review

宽带隙半导体包括碳化硅(SiC)和氮化镓(GaN),鉴于它们具有能提供更高能量效率的卓越特性,目前正在吸引人们将其应用于下一代功率器件中。
*转载自Toshiba Review(第72卷,第5条,2017年11月)

2018/06June 2018

Toshiba
Review

虽然客户级SSD(cSSD)的更高速接口和更大存储容量可能会导致未来功耗增加的趋势,但仍有必要按照国际标准提高cSSD的节能性能。 东芝电子元件及存储装置株式会社开发了适用于cSSD的TC7738WBG电源管理IC,它通过使用WCSP而降低了功耗和封装尺寸。
*转载自Toshiba Review(第72卷,第5条,2017年11月)

2018/06June 2018

Toshiba
Review

在MCD IC中,除了基本的电机控制功能外,还需要有一个电源管理功能,以便向设备中的其它装置提供多个不同的电压,并管理它们的功耗。
*转载自Toshiba Review(第72卷,第5条,2017年11月)

2018/07July 2018

Toshiba
Review

用于物联网(IoT)设备的无线传感器节点大多处于待机模式,待机模式下其功耗小于1mW,并且仅在执行数据通信时间歇地进入活动模式,此时其功耗增加到几十mW。因此,用于物联网设备的单电感多输出(SIMO)DC-DC转换器,必须在宽负载范围内实现高转换效率。
*转载自Toshiba Review(第72卷,第5条,2017年11月)

2018/07July 2018

Conference
Paper

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Data selection and de-noising based on reliability for long-range and high-pixel resolution LiDAR," 2018 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, 2018, pp. 1-3. doi: 10.1109/CoolChips.2018.8373079 Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8373079)

2018/09September 2018

Conference
Paper

K. Yoshioka et al., "A 20ch TDC/ADC hybrid SoC for 240×96-pixel 10%-reflection <0.125%-precision 200m-range imaging LiDAR with smart accumulation technique," 2018 IEEE International Solid - State Circuits Conference - (ISSCC), San Francisco, CA, 2018, pp. 92-94. doi: 10.1109/ISSCC.2018.8310199Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8310199)

2018/09September 2018

R&D/
Technical Report

Recently the importance of EMC (Electromagnetic Compatibility) testing is increasing against the backdrop of ECE R10 legislation. Toshiba EMC testing laboratories have received ISO / IEC 17025 certification.

2018/11November 2018

Conference
Paper

H. Yamashita et al., "Low noise superjunction MOSFET with integrated snubber structure," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 32-35. doi: 10.1109/ISPSD.2018.8393595Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393595)

2018/12February 2019

Conference
Paper

W. Saito, "Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 36-39. doi: 10.1109/ISPSD.2018.8393596Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393596)

2018/11November 2018

Conference
Paper

T. Sugiyama et al., "Evaluation methodology for current collapse phenomenon of GaN HEMTs," 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, 2018, pp. 3B.4-1-3B.4-5. doi: 10.1109/IRPS.2018.8353559Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8353559)

2019/01January 2019

Toshiba
Review

最近,互联、自主、共享、电气(CASE)作为全球汽车工业的下一代趋势收到密切关注。本文描述了汽车的环境和汽车半导体的技术趋势。
*转载自Toshiba Review(第73卷,第6条,2018年11月)

2019/02February 2019

Conference
Paper

Y. Yamada et al., "7.2 A 20.5TOPS and 217.3GOPS/mm2 Multicore SoC with DNN Accelerator and Image Signal Processor Complying with ISO26262 for Automotive Applications," 2019 IEEE International Solid- State Circuits Conference - (ISSCC), San Francisco, CA, USA, 2019, pp. 132-134. doi: 10.1109/ISSCC.2019.8662459Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8662459)

2019/03March 2019

Toshiba
Review

由于实际实现了先进的驾驶员辅助系统(ADAS),支持安全驾驶的汽车传感技术的创新在性能和成本方面都在不断提高。
*转载自Toshiba Review(第73卷,第6条,2018年11月)

2019/05May 2019

Toshiba
Review

Toshiba is engaged in the development of motor driver IC products for automotive use, which achieve a balance between high-density mounting and reduction of package size in order to realize compact size in-vehicle motor systems
*Toshiba Review (Vol.73, No.6, November 2018)

2019/05May 2019

Toshiba
Review

Accompanying the expanding dissemination of eco-friendly automobiles, demand has been increasing for reduction of the power consumption of automotive semiconductor devices.Our Bluetooth LE IC and power amplifier facilitate reduction of the size of in-vehicle electronic systems.
*Toshiba Review (Vol.73, No.6, November 2018)

2019/05May 2019

Toshiba
Review

In line with this trend in the development of semiconductor relays, Toshiba Electronic Devices & Storage Corporation has developed and released products including power metal-oxide-semiconductor field-effect transistors (MOSFETs) and controller integrated circuits (ICs) to control the gate on/o_ state of power MOSFETs for automotive.
*Toshiba Review (Vol.73, No.6 November 2018)

2019/07July 2019

Conference
Paper

K. Agawa, R. Ninomiya, M. Takizawa, T. Mori and T. Sakurai, "Connection Structure Using Rubber Connectors in the IoT Edge Platform, Trillion Node Engine," 2018 IEEE CPMT Symposium Japan (ICSJ), Kyoto, 2018, pp. 55-58. doi: 10.1109/ICSJ.2018.8602895 Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8602895)

2019/07July 2019

Conference
Paper

T. Mizoguchi, Y. Sakiyama, N. Tsukamoto and W. Saito, "High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 307-310 doi: 10.1109/ISPSD.2019.8757656 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757656)

2019/07July 2019

Conference
Paper

K. Komatsu et al., "Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 363-366. doi: 10.1109/ISPSD.2019.8757670 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757670)

2019/07July 2019

Conference
Paper

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Inter-Frame Smart-Accumulation Technique for Long-Range and High-Pixel Resolution LiDAR," 2019 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, Japan, 2019, pp. 1-3. doi: 10.1109/CoolChips.2019.8721340 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8721340)

2019/07July 2019

R&D/
Technical
Report

Leaves having various functions were developed in this project commissioned by the New Energy and Industrial Technology Development Organization (NEDO), and the practicality and reliability of the platform have been verified.

2019/07July 2019

Conference
Paper

H. Kobayashi et al., "Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 515-518. doi: 10.1109/ISPSD.2019.8757691 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757691)

2019/08Aug. 2019

Conference
Paper

T. Nishiwaki et al., "Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 91-94. doi: 10.1109/ISPSD.2019.8757695 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757695)

2019/08Aug. 2019

Conference
Paper

K. Kobayashi et al., "100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 99-102. doi: 10.1109/ISPSD.2019.8757615 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757615)

2019/08Aug. 2019

Toshiba
Review

The TMPM4K is expected to offer high performance due to increased processing speed while reducing costs because of the smaller number of parts required.
*Toshiba Review (Vol.74, No.1, January 2019)

2019/08Aug. 2019

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