TVS diodes which protects high-voltage lines, such as a NFC antenna: DF2B12M4SL, DF2B26M4SL

Product News 2018-04

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The package photograph of TVS diodes which protects high-voltage lines, such as a NFC antenna: DF2B12M4SL, DF2B26M4SL.

"DF2B12M4SL" and "DF2B26M4SL" are TVS diodes featuring low dynamic resistance and low capacitance, suitable for protecting high voltage lines such as NFC^[1] antennas used in smartphones and tablets.
The new products have a working peak reverse voltage of 11 V/ 24 V. They join the lineup alongside the existing products DF2BxxM4SL series with a working peak reverse voltage of 3.6 V/ 5.5 V/18.5 V. Customers can select products depending on the signal voltage they use. In addition, their low capacitance provides better protection for high speed signals (such as differential signals).
Featuring low dynamic resistance^[2] and a high electrostatic discharge voltage of ±15 kV^[3], new products can contribute to the higher reliability of devices such as NFC^[1] antennas.
With their small package SOD-962^[4] (Toshibaʼs package name: SL2), these products are suitable for high density mounting.

Notes:
[1] NFC (Near Field Communication) is a short-range radio communication function and used for various devices such as IC cards, mobile phones, PCs and home appliances.
[2] Used as an index to compare protection performance. Lower dynamic resistance indicates better noise absorption.
[3] IEC61000-4-2 (Contact discharge)
[4] 0.62×0.32×0.3 mm (typ.)

Features

High protection performance with low dynamic resistance:
R_DYN=0.2 Ω (typ.) (DF2B26M4SL)
R_DYN=0.65 Ω (typ.) (DF2B12M4SL)
Supports high voltage lines such as for NFC^[1] antennas
High electrostatic discharge voltage rating: V_ESD= ±15 kV @IEC61000-4-2 (Contact) Level4

Applications

Smart phones
Tablets
Laptop PCs
Wearable devices, etc.

Product Specifications

(@T_a=25 °C)

Part number	Package	Absolute maximum ratings	Working peak reverse voltage V_RWM max (V)	Reverse breakdown voltage V_BR min / max @I_BR=1 mA (V)	Clamp voltage V_C^[5] typ. (V)		Dynamic resistance R_DYN^[6] typ. @I_PP1=8 A to I_PP2=16 A (Ω)	Total capacitance C_t typ. @V_R=0 V (pF)
Part number	Package	Electrostatic discharge voltage V_ESD^[3] (kV)	Working peak reverse voltage V_RWM max (V)	Reverse breakdown voltage V_BR min / max @I_BR=1 mA (V)	@I_TLP =8 A	@I_TLP =16 A		Total capacitance C_t typ. @V_R=0 V (pF)
DF2B5M4SL	SOD-962^[4] (SL2)	±20	3.6	4.0 / 6.0	-	17	0.5	0.2
DF2B6M4SL		±20	5.5	5.6 / 8	-	18	0.5	0.2
DF2B12M4SL^[7]		±15	11	11.5 / 16.0	22	27	0.65	0.2
DF2B20M4SL		±15	18.5	19.5 / 26	26	27.6	0.2	0.2
DF2B26M4SL^[7]		±15	24	21.0 / 33.0	30	31.5	0.2	0.2

Notes:
[5] @IEC61000-4-5 8/20 μs pulse
[6] @TLP parameters: Z_O=50 Ω, t_p=100 ns, t_r=300 ps, averaging window t₁=30 ns to t₂=60 ns
[7] New products

Internal Circuit

The illustration of internal circuit of TVS diodes which protects high-voltage lines, such as a NFC antenna: DF2B12M4SL, DF2B26M4SL.

Application Circuit Example

The illustration of application circuit example of TVS diodes which protects high-voltage lines, such as a NFC antenna: DF2B12M4SL, DF2B26M4SL.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Characteristic Curves (Reference)

The illustration of characteristic curves of TVS diodes which protects high-voltage lines, such as a NFC antenna: DF2B12M4SL, DF2B26M4SL.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.