Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)
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The reverse recovery time (trr) of the SBD is determined by the LC resonance circuit based on the junction capacitance and the inductance of the external wiring. (Since the junction capacitance is hardly influenced by temperature, trr is the same from room temperature to high temperature.)
For pn junction diodes, trr becomes longer as the temperature rises. As a result, the switching characteristics of the SBD become more and more advantageous, which makes it suitable for higher-frequency switching.
Note:
Since SBD is a unipolar device, it does not have reverse recovery time due to carrier recombination like pn junction diodes. However, the current waveform charging the capacity between the terminals of SBD is observed like the reverse recovery time of the p-n junction diode.
Therefore, it is described as reverse recovery time in this document.
Chapter II : Diodes
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