Lineup Expansion of 1700 V SiC MOSFET Module that Contributes to High Efficiency and Downsizing of Industrial Equipment

Product News 2024-03

The package photograph of lineup expansion of 1700 V SiC MOSFET module that contributes to high efficiency and downsizing of industrial equipment.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of a 3rd generation silicon carbide (SiC) 1700 V and drain current (DC) rating 250 A of SiC MOSFET module “MG250V2YMS3” for industrial equipment and has expanded its lineup.

The new product MG250V2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.8 V (typ.)[1]. It also offers low switching loss with low turn-on switching loss of 18 mJ (typ.)[2] and low turn-off switching loss of 11 mJ (typ.)[2]. This helps to reduce power loss of equipment and the size of cooling device.
MG250V2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.

Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of four existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.

Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.

Notes:
[1] Test condition: ID=250 A, VGS=+20 V, Tch=25 °C
[2] Test condition: VDD=900 V, ID=250 A, Tch=150 °C

Applications

Industrial equipment

  • Inverters and converters for railway vehicles
  • Auxiliary power supply for railway vehicles
  • Renewable energy power generation systems
  • Motor control equipment for industrial equipment
  • High frequency DC-DC converters, etc.

Features

  • Low drain-source on-voltage (sense):
    VDS(on)sense=0.8 V (typ.) (ID=250 A, VGS=+20 V, Tch=25 °C)
  • Low turn-on switching loss:
    Eon=18 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
  • Low turn-off switching loss:
    Eoff=11 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
  • Low stray inductance:
    LsPN=12 nH (typ.)

Main Specifications

(Tc=25 °C unless otherwise specified)

Part number MG250V2YMS3
Toshiba’s package name 2-153A1A
Absolute
maximum
ratings
Drain-source voltage  VDSS  (V) 1700
Gate-source voltage  VGSS  (V) +25 / -10
Drain current (DC)  ID  (A) 250
Drain current (pulsed)  IDP  (A) 500
Channel temperature  Tch  (°C) 150
Isolation voltage  Visol  (Vrms) 4000
Electrical
characteristics
Drain-source on-voltage (sense)
VDS(on)sense  (V)
ID=250 A, VGS=+20 V,
Tch=25 °C
Typ. 0.8
Source-drain on-voltage (sense)
VSD(on)sense  (V)
IS=250 A, VGS=+20 V,
Tch=25 °C
Typ. 0.8
Source-drain off-voltage (sense)
VSD(off)sense  (V)
IS=250 A, VGS=-6 V,
Tch=25 °C
Typ. 1.6
Turn-on switching loss
Eon  (mJ)
VDD=900 V, ID=250 A,
Tch=150 °C
Typ. 18
Turn-off switching loss
Eoff  (mJ)
Typ. 11
Stray inductance  LsPN  (nH) Typ. 12

Internal Circuit

The illustration of internal circuit of lineup expansion of 1700 V SiC MOSFET module that contributes to high efficiency and downsizing of industrial equipment.

Application Circuit Example

The illustration of application circuit example of lineup expansion of 1700 V SiC MOSFET module that contributes to high efficiency and downsizing of industrial equipment.

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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