Small active-clamp MOSFET for relay drivers: SSM3K357R
Product News 2017-11
Document Download (PDF:116KB)
“SSM3K357R” is new MOSFET that adopts an active-clamp structure with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays.
The SSM3K357R protects drivers against damage caused by voltage surges, such as back-EMF caused by inductance. It integrates a pull-down resistor, series resistor and Zener diode, which helps reduce the part count and save on board space.
An industry-standard SOT-23-class package, a low operating voltage of 3.0 V and AEC-Q101 qualification make the SSM3K357R suitable for automotive and many other applications.
Features
- Active clamp structure suitable for driving an inductive load
- Low operating voltage of 3.0 V
- AEC-Q101 qualified
Applications
- Relay and solenoid control for automotive equipment
- Relay and solenoid control for industry equipment
- Clutch control for OA equipment
Product Specifications
(@Ta=25°C)
| Part number | Package | Absolute maximum ratings | Drain-source On-resistance RDS(ON) typ. (mΩ) |
Total gate charge Qg typ. (nC) |
Input capacitance Ciss typ. (pF) |
|||
|---|---|---|---|---|---|---|---|---|
| Drain- source voltage VDSS (V) |
Gate- source voltage VGSS (V) |
Drain current (DC) ID (A) |
@VGS= 3.0 V |
@VGS= 5.0 V |
||||
| SOT-23F | 60 | ±12 | 0.65 | 1200 | 800 | 1.5 | 43 | |
Pin Assignment
Application Circuit Example
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.